EFFECTS OF LAYER THICKNESS VARIATIONS ON VERTICAL-CAVITY SURFACE-EMITTING DBR SEMICONDUCTOR-LASERS

被引：13

作者：

WEBER, JP

MALLOY, K

WANG, S

机构：

[1] Department of Electrical Engineering and Computer Science, Electronics Research Laboratory, University of California, Berkeley

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1990年 / 2卷 / 03期

关键词：

D O I：

10.1109/68.50875

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a theoretical analysis of the influence of layer thickness variation in vertical-cavity surface-emitting lasers with distributed Bragg reflectors (DBR) on lasing wavelength. We show that changing the active region length or one of the layers in the DBR mirror by only one unit cell (0.56 nm) is sufficient to produce shifts in the lasing wavelength up to 0.12 nm (for an AIGaAs laser). This could limit the precision with which we can obtain a desired wavelength, its reproducibility, and its uniformity across a large wafer. We also discuss possible influences on the linewidth of broad area devices. © 1990 IEEE

引用

页码：162 / 164

页数：3

共 13 条

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