SEMICONDUCTOR SURFACE ETCHING BY HALOGENS - FUNDAMENTAL STEPS

被引：52
作者：
JACKMAN, RB
PRICE, RJ
FOORD, JS
机构：
来源：
APPLIED SURFACE SCIENCE | 1989年 / 36卷 / 1-4期
关键词：
D O I：
10.1016/0169-4332(89)90925-2
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：296 / 312
页数：17
相关论文
共 25 条
[1]   LASER-INDUCED GAS-SURFACE INTERACTIONS [J].
Chuang, T. J. .
SURFACE SCIENCE REPORTS, 1983, 3 (01) :1-105
[2]   LOCAL-STRUCTURE OF ADSORBATES ON SEMICONDUCTOR SURFACES USING SEXAFS - A BRIEF SUMMARY [J].
CITRIN, PH ;
ROWE, JE .
SURFACE SCIENCE, 1983, 132 (1-3) :205-211
[3]   CHEMISORPTIVE EMISSION AND LUMINESCENCE .2. ELECTRON AND ION EMISSION FROM CHLORINE AND BROMINE REACTIONS WITH YTTRIUM, TITANIUM, ZIRCONIUM AND HAFNIUM SURFACES [J].
COX, MP ;
FOORD, JS ;
LAMBERT, RM ;
PRINCE, RH .
SURFACE SCIENCE, 1983, 129 (2-3) :399-418
[4]   ADSORPTION-DESORPTION STUDIES USING ESD OF CCL2F2, C2H2F2 AND C2F6 ON TUNGSTEN [J].
DEMORAES, MAB ;
LICHTMAN, D .
SURFACE SCIENCE, 1985, 160 (02) :362-378
[5]   LASER CHEMICAL TECHNIQUE FOR RAPID DIRECT WRITING OF SURFACE RELIEF IN SILICON [J].
EHRLICH, DJ ;
OSGOOD, RM ;
DEUTSCH, TF .
APPLIED PHYSICS LETTERS, 1981, 38 (12) :1018-1020
[6]  
ERTL G, 1974, LOW ENERGY ELECTRONS
[7]   ETCHING AND FILM FORMATION IN CF3BR PLASMAS - SOME QUALITATIVE OBSERVATIONS AND THEIR GENERAL IMPLICATIONS [J].
FLAMM, DL ;
COWAN, PL ;
GOLOVCHENKO, JA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (06) :1341-1347
[8]   CHLORINE REACTIONS ON SI (111) SURFACE [J].
FLORIO, JV ;
ROBERTSO.WD .
SURFACE SCIENCE, 1969, 18 (02) :398-&
[9]   STUDIES OF ADSORPTION AND ELECTRON-INDUCED DISSOCIATION OF FE(CO)5 ON SI(100) [J].
FOORD, JS ;
JACKMAN, RB .
SURFACE SCIENCE, 1986, 171 (01) :197-207
[10]   X-RAY STANDING WAVE FLUORESCENCE MEASUREMENTS IN ULTRAHIGH-VACUUM - ADSORPTION OF BR ON SI(111)-(1X1) [J].
FUNKE, P ;
MATERLIK, G .
SOLID STATE COMMUNICATIONS, 1985, 54 (11) :921-923
123