THEORETICAL INVESTIGATIONS OF THE NATURE OF THE NORMAL AND INVERTED GAAS-ALGAAS STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY

被引:51
作者
SINGH, J [1 ]
BAJAJ, KK [1 ]
机构
[1] USAF,AVION LAB,AIR FORCE WRIGHT AERONAUT LABS,WRIGHT PATTERSON AFB,OH 45433
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 03期
关键词
D O I
10.1116/1.582841
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:576 / 581
页数:6
相关论文
共 16 条
[1]   VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM [J].
ARTHUR, JR .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (11) :2257-&
[2]  
ARTHUR JR, 1974, SURF SCI, V43, P499
[3]   THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J].
BURTON, WK ;
CABRERA, N ;
FRANK, FC .
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) :299-358
[4]  
CHO AY, 1975, PROGR SOLID STATE CH, V10, P175
[5]  
DRUMMOND TJ, 1983, APPL PHYS LETT, V42, P616
[6]   INTERACTION KINETICS OF AS2 AND GA ON [100] GAAS SURFACES [J].
FOXON, CT ;
JOYCE, BA .
SURFACE SCIENCE, 1977, 64 (01) :293-304
[7]   SIMULATION OF CRYSTAL-GROWTH WITH SURFACE DIFFUSION [J].
GILMER, GH ;
BENNEMA, P .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) :1347-+
[8]  
MARKOC H, 1982, J APPL PHYS, V53, P1032
[9]  
NAGATA S, 1977, J APPL PHYS, V48, P950
[10]   SURFACE ORIENTATION DEPENDENT SURFACE KINETICS AND INTERFACE ROUGHENING IN MOLECULAR-BEAM EPITAXIAL-GROWTH OF III-V-SEMICONDUCTORS - A MONTE-CARLO STUDY [J].
SINGH, J ;
MADHUKAR, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :305-312