A STUDY OF DEEP LEVELS IN MOCVD-GROWN INP/SEMI-INSULATING INP STRUCTURE

被引：4
|
作者：
OGURA, M [1 ]
MIZUTA, M [1 ]
HASE, N [1 ]
KUKIMOTO, H [1 ]
机构：
[1] MATSUSHITA ELECT IND CO LTD,CENT RES LAB,MORIGUCHI,OSAKA 570,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1984年 / 23卷 / 01期
关键词：
D O I：
10.1143/JJAP.23.79
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：79 / 83
页数：5
相关论文
共 50 条
  • [21] SEMI-INSULATING FE-DOPED INP LAYERS GROWN BY MOVPE
    SPEIER, P
    WIEDEMANN, P
    KUEBART, W
    GROSSKOPF, H
    GROTJAHN, F
    SCHULER, F
    TEGUDE, FJ
    WUNSTEL, K
    SEMI-INSULATING III-V MATERIALS, MALMO 1988, 1988, : 295 - 300
  • [22] CHARACTERIZATION OF MOCVD-GROWN INP ON INGAP/GAAS(001)
    REAVES, CM
    BRESSLERHILL, V
    VARMA, S
    WEINBERG, WH
    DENBAARS, SP
    SURFACE SCIENCE, 1995, 326 (03) : 209 - 217
  • [23] INGAAS/INP HETEROBIPOLAR TRANSISTORS FOR INTEGRATION ON SEMI-INSULATING INP SUBSTRATES
    DAMBKES, H
    KONIG, U
    SCHWADERER, B
    ELECTRONICS LETTERS, 1984, 20 (23) : 955 - 957
  • [24] Semi-insulating InP through wafer annealing
    Oda, O
    Uchida, M
    Kainosho, K
    Ohta, M
    Warashina, M
    Tajima, M
    1997 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1997, : 404 - 407
  • [25] IRON AND CHROMIUM REDISTRIBUTION IN SEMI-INSULATING INP
    OBERSTAR, JD
    STREETMAN, BG
    BAKER, JE
    WILLIAMS, P
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (08) : 1814 - 1817
  • [26] Uniformity of deep levels in semi-insulating InP obtained by multiple-step wafer annealing
    Kuriyama, K
    Ushiyama, K
    Tsunoda, T
    Uchida, M
    Yokoyama, K
    JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (05) : 462 - 465
  • [27] Uniformity of deep levels in semi-insulating InP obtained by multiple-step wafer annealing
    K. Kuriyama
    K. Ushiyama
    T. Tsunoda
    M. Uchida
    K. Yokoyama
    Journal of Electronic Materials, 1998, 27 : 462 - 465
  • [28] LATERAL PHOTODETECTORS ON SEMI-INSULATING INGAAS AND INP
    DIADIUK, V
    GROVES, SH
    APPLIED PHYSICS LETTERS, 1985, 46 (02) : 157 - 158
  • [29] Reproducibility in the fabrication of undoped semi-insulating InP
    Uchida, M
    Kainosho, K
    Ohta, M
    Oda, O
    1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996, : 43 - 46
  • [30] LATERAL PHOTODETECTORS ON SEMI-INSULATING INGAAS AND INP
    DIADIUK, V
    GROVES, SH
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) : 1973 - 1973
12345