A STUDY OF DEEP LEVELS IN MOCVD-GROWN INP/SEMI-INSULATING INP STRUCTURE

被引：4
|
作者：
OGURA, M [1 ]
MIZUTA, M [1 ]
HASE, N [1 ]
KUKIMOTO, H [1 ]
机构：
[1] MATSUSHITA ELECT IND CO LTD,CENT RES LAB,MORIGUCHI,OSAKA 570,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1984年 / 23卷 / 01期
关键词：
D O I：
10.1143/JJAP.23.79
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：79 / 83
页数：5
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