COHERENT PRECIPITATION OF SILICON-NITRIDE IN SILICON

被引:12
作者
KAUSHIK, VS
DATYE, AK
KENDALL, DL
MARTINEZTOVAR, B
MYERS, DR
机构
[1] UNIV NEW MEXICO,DEPT ELECT & COMP ENGN,ALBUQUERQUE,NM 87131
[2] SANDIA NATL LABS,ALBUQUERQUE,NM 87185
关键词
D O I
10.1063/1.99722
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1782 / 1784
页数:3
相关论文
共 8 条
[1]   COHERENT PRECIPITATE FORMATION IN TL IMPLANTED SI [J].
APPLETON, BR ;
NARAYAN, J ;
WHITE, CW ;
WILLIAMS, JS ;
SHORT, KT .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY) :239-242
[2]   CHARACTERIZATION OF BURIED SILICON-NITRIDE FORMED BY NITROGEN IMPLANTATION [J].
BELZ, J ;
TEKAAT, EH ;
ZIMMER, G ;
VOGT, H .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 :279-284
[3]   MICROSTRUCTURE OF TIC PRECIPITATES IN TI-IMPLANTED ALPHA-FE [J].
FOLLSTAEDT, DM .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) :1001-1010
[4]  
GOLECKI I, 1984, MATER RES SOC S P, V33, P3
[5]   FORMATION OF PARTIALLY COHERENT ANTIMONY PRECIPITATES IN ION-IMPLANTED THERMALLY ANNEALED SILICON [J].
PENNYCOOK, SJ ;
NARAYAN, J ;
HOLLAND, OW .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) :6875-6878
[6]   LOCALIZED EPITAXIAL-GROWTH OF TASI2 ON (111) AND (001)SI BY RAPID THERMAL ANNEALING [J].
WU, IC ;
CHU, JJ ;
CHEN, LJ .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) :879-883
[7]   CMOS ON BURIED NITRIDE - A VLSI SOI TECHNOLOGY [J].
ZIMMER, G ;
VOGT, H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) :1515-1520
[8]   LATTICE MATCH - AN APPLICATION TO HETEROEPITAXY [J].
ZUR, A ;
MCGILL, TC .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (02) :378-386