ANGLE-RESOLVED PHOTOEMISSION-STUDY OF THE GE/GAAS(100) INTERFACE

被引：0

作者：

SALMON, LG ^{[1
]}

RHODIN, TN ^{[1
]}

机构：

[1] CORNELL UNIV,SCH APPL & ENGN PHYS,ITHACA,NY 14853

来源：

INSTITUTE OF PHYSICS CONFERENCE SERIES | 1983年 / 65期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：561 / 568

页数：8

共 12 条

[1] SURFACE PROCESSES CONTROLLING MBE HETEROJUNCTION FORMATION - GAAS(100)/GE INTERFACES [J].

BAUER, RS ;

MIKKELSEN, JC .

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[2] GE-GAAS(110) INTERFACE FORMATION [J].

BAUER, RS ;

MCMENAMIN, JC .

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[3] ANGLE-RESOLVED PHOTOEMISSION, VALENCE-BAND DISPERSIONS E(K-]), AND ELECTRON AND HOLE LIFETIMES FOR GAAS [J].

CHIANG, TC ;

KNAPP, JA ;

AONO, M ;

EASTMAN, DE .

PHYSICAL REVIEW B, 1980, 21 (08) :3513-3522

[4] POLAR HETEROJUNCTION INTERFACES [J].

HARRISON, WA ;

KRAUT, EA ;

WALDROP, JR ;

GRANT, RW .

PHYSICAL REVIEW B, 1978, 18 (08) :4402-4410

[5] SURFACE RECONSTRUCTION ON SEMICONDUCTORS [J].

HARRISON, WA .

SURFACE SCIENCE, 1976, 55 (01) :1-19

[6] ATOMIC-STRUCTURE AND PROPERTIES OF POLAR GE-GAAS(100) INTERFACES [J].

KUNC, K ;

MARTIN, RM .

PHYSICAL REVIEW B, 1981, 24 (06) :3445-3455

[7]

LARSEN PK, 1981, SOLID STATE COMMUN, V40, P459, DOI 10.1016/0038-1098(81)90861-9

[8]

Mazur A., 1980, Journal of the Physical Society of Japan, V49, P1121

[9] CHEMISORPTION-INDUCED DEFECTS ON GAAS(110) SURFACES [J].

MONCH, W ;

GANT, H .

PHYSICAL REVIEW LETTERS, 1982, 48 (07) :512-515

[10]

MRSTICK B, 1982, B AM PHYS SOC, V27, P310

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