TEMPERATURE AND FIELD-DEPENDENCE OF THE GENERATION OF INTERFACE STATES IN THE SI-SIO2 SYSTEM AFTER HIGH-FIELD STRESS

被引:13
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WU, JK
LYON, SA
JOHNSON, WC
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10.1063/1.94010
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O59 [应用物理学];
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页码:585 / 587
页数:3
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