THEORETICAL-ANALYSIS OF AMORPHOUS-SILICON FIELD-EFFECT-TRANSISTORS

被引：63
作者：
KISHIDA, S
NARUKE, Y
UCHIDA, Y
MATSUMURA, M
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1983年 / 22卷 / 03期
关键词：
D O I：
10.1143/JJAP.22.511
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：511 / 517
页数：7
相关论文
共 7 条
[1]  
DEMASSA TA, 1974, SOLID STATE ELECTRON, V18, P312
[2]   ANALYSIS OF FIELD-EFFECT AND CAPACITANCE-VOLTAGE MEASUREMENTS IN AMORPHOUS-SEMICONDUCTORS [J].
GOODMAN, NB ;
FRITZSCHE, H .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 42 (01) :149-165
[3]   AMORPHOUS-SILICON SILICON-OXYNITRIDE FIELD-EFFECT TRANSISTORS [J].
ISHIBASHI, K ;
MATSUMURA, M .
APPLIED PHYSICS LETTERS, 1982, 41 (05) :454-456
[4]   AMORPHOUS-SILICON FIELD-EFFECT DEVICE AND POSSIBLE APPLICATION [J].
LECOMBER, PG ;
SPEAR, WE ;
GHAITH, A .
ELECTRONICS LETTERS, 1979, 15 (06) :179-181
[5]   AMORPHOUS SILICON THIN-FILM TRANSISTOR - THEORY AND EXPERIMENT [J].
NEUDECK, GW ;
MALHOTRA, AK .
SOLID-STATE ELECTRONICS, 1976, 19 (08) :721-729
[6]   ANALYSIS OF FIELD-EFFECT-CONDUCTANCE MEASUREMENTS ON AMORPHOUS-SEMICONDUCTORS [J].
POWELL, MJ .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 43 (01) :93-103
[7]   INFLUENCE OF GAP STATES ON BASIC CHARACTERISTICS OF A-SI-H THIN-FILM TRANSISTORS [J].
SUZUKI, T ;
HIROSE, M ;
OSAKA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (05) :L315-L317
1