REFRACTIVE-INDEX CHANGES FORMED BY N+ IMPLANTS IN SILICA

被引：13

作者：

FAIK, AB ^{[1
]}

CHANDLER, PJ ^{[1
]}

TOWNSEND, PD ^{[1
]}

WEBB, R ^{[1
]}

机构：

[1] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1986年 / 98卷 / 1-4期

关键词：

D O I：

10.1080/00337578608206114

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：233 / 241

页数：9

共 20 条

[1]

Bayly A. R., 1973, Radiation Effects, V18, P111, DOI 10.1080/00337577308234725

[2] VOLUME, INDEX-OF-REFRACTION, AND STRESS CHANGES IN ELECTRON-IRRADIATED VITREOUS SILICA [J].

DELLIN, TA ;

TICHENOR, DA ;

BARSIS, EH .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :1131-1138

[3] A STUDY OF AR IMPLANTATION INDUCED DEFECTS IN SIO2 [J].

DEVINE, RAB ;

FERRIEU, F ;

GOLANSKI, A .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY) :1201-1206

[4] INTRODUCTION RATES AND ANNEALING OF DEFECTS IN ION-IMPLANTED SIO2 LAYERS ON SI [J].

EERNISSE, EP ;

NORRIS, CB .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (12) :5196-5205

[5] COMPACTION OF ION-IMPLANTED FUSED SILICA [J].

EERNISSE, EP .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) :167-174

[6]

EERNISSE EP, 1974, J APPL PHYS, V45, P3876

[7]

FAIK AB, 1984, THESIS SUSSEX

[8] REFRACTIVE-INDEX PROFILES OF ION-IMPLANTED FUSED-SILICA [J].

HEIBEI, J ;

VOGES, E .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 57 (02) :609-618

[9] INDEX PROFILES OF PLANAR OPTICAL-WAVEGUIDES DETERMINED FROM ANGULAR-DEPENDENCE OF REFLECTIVITY [J].

HEIBEI, J ;

VOGES, E .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (07) :501-506

[10] THE OPTICAL-PROPERTIES OF SIOX FORMED BY HIGH-DOSE SI ION-IMPLANTATION INTO FUSED-SILICA [J].

HEIDEMANN, KF .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 61 (3-4) :235-246

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