DIFFUSIVITY AND GROWTH-RATE OF SILICON IN SOLID-PHASE EPITAXY WITH AN ALUMINUM MEDIUM

被引：7
作者：
QINGHENG, H [1 ]
YANG, ES [1 ]
IZMIRLIYAN, H [1 ]
机构：
[1] COLUMBIA UNIV,DEPT ELECT ENGN,NEW YORK,NY 10027
来源：
SOLID-STATE ELECTRONICS | 1982年 / 25卷 / 12期
关键词：
D O I：
10.1016/0038-1101(82)90078-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1187 / 1188
页数：2
相关论文
共 4 条
[1]   DIFFUSION-COEFFICIENT AND SOLUBILITY OF GE AND GAAS IN PB AND APPLICATION TO LPE GROWTH OF GE ON GAAS [J].
IMMORLICA, AA ;
LUDINGTON, BW .
JOURNAL OF CRYSTAL GROWTH, 1981, 51 (01) :131-139
[2]   DIFFUSIVITY AND SOLUBILITY OF SI IN AL METALLIZATION OF INTEGRATED CIRCUITS [J].
MCCALDIN, JO ;
SANKUR, H .
APPLIED PHYSICS LETTERS, 1971, 19 (12) :524-&
[3]   EFFICIENT SI SOLAR-CELLS BY LOW-TEMPERATURE SOLID-PHASE EPITAXY [J].
TSAUR, BY ;
TURNER, GW ;
FAN, JCC .
APPLIED PHYSICS LETTERS, 1981, 39 (09) :749-751
[4]  
WOLF HF, 1971, SEMICONDUCTORS, P229
1