TEMPERATURE-DEPENDENCE OF LONG WAVELENGTH SEMICONDUCTOR-LASERS

被引：34

作者：

OGORMAN, J

LEVI, AFJ

TANBUNEK, T

COBLENTZ, DL

LOGAN, RA

机构：

[1] AT and T Bell Laboratories, Murray Hill

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 09期

关键词：

D O I：

10.1063/1.106443

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We compare the temperature dependent characteristics of multiple quantum well semiconductor laser diodes and light emitting diodes operating at a wavelength, lambda = 1.3-mu-m. No model in which Auger recombination is the dominant temperature sensitive parameter can explain our experimental observations. We suggest that net gain is the appropriate temperature dependent variable which determines laser diode performance at elevated temperatures.

引用

收藏

页码：1058 / 1060

页数：3

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