MODELING OF MINORITY-CARRIER CURRENT IN HEAVILY DOPED REGIONS OF BIPOLAR REGIONS

被引:5
作者
KUZMICZ, W
机构
关键词
D O I
10.1109/TCAD.1986.1270188
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
引用
收藏
页码:204 / 214
页数:11
相关论文
共 20 条
[2]  
de Graaff H. C., 1977, Solid-State Electronics, V20, P515, DOI 10.1016/S0038-1101(77)81008-3
[3]   INTEGRAL-EQUATION SOLUTION OF MINORITY-CARRIER TRANSPORT PROBLEMS IN HEAVILY DOPED SEMICONDUCTORS [J].
DECASTRO, E ;
RUDAN, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (06) :785-792
[4]   HIGH-LOW JUNCTIONS FOR SOLAR-CELL APPLICATIONS [J].
DELALAMO, J ;
VANMEERBERGEN, J ;
DHOORE, F ;
NIJS, J .
SOLID-STATE ELECTRONICS, 1981, 24 (06) :533-538
[5]   THE PHYSICS AND MODELING OF HEAVILY DOPED EMITTERS [J].
DELALAMO, JA ;
SWANSON, RM .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) :1878-1888
[6]   MATHEMATICAL PROOF OF THE VALIDITY OF RECIPROCITY IN ONE-DIMENSIONAL BIPOLAR-TRANSISTORS WITH ARBITRARY BASE PARAMETERS [J].
DEMAN, HJ ;
GHANNAM, MY ;
MERTENS, RP .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) :1720-1723
[8]   A PHYSICAL MODEL FOR THE DEPENDENCE OF CARRIER LIFETIME ON DOPING DENSITY IN NONDEGENERATE SILICON [J].
FOSSUM, JG ;
LEE, DS .
SOLID-STATE ELECTRONICS, 1982, 25 (08) :741-747
[9]  
KUZMICZ W, UNPUB IONIZATION IMP
[10]  
KUZMICZ W, 1983, PHYSICS SEMICONDUCTO