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DENSITY-MATRIX THEORY OF SEMICONDUCTOR-LASERS WITH RELAXATION BROADENING MODEL - GAIN AND GAIN-SUPPRESSION IN SEMICONDUCTOR-LASERS
被引:257
作者
:
论文数:
引用数:
h-index:
机构:
ASADA, M
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Tokyo Inst of Technology, Dep of, Physical Electronics, Tokyo, Jpn, Tokyo Inst of Technology, Dep of Physical Electronics, Tokyo, Jpn
SUEMATSU, Y
机构
:
[1]
Tokyo Inst of Technology, Dep of, Physical Electronics, Tokyo, Jpn, Tokyo Inst of Technology, Dep of Physical Electronics, Tokyo, Jpn
来源
:
IEEE JOURNAL OF QUANTUM ELECTRONICS
|
1985年
/ 21卷
/ 05期
关键词
:
D O I
:
10.1109/JQE.1985.1072674
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
34
引用
收藏
页码:434 / 442
页数:9
相关论文
共 34 条
[1]
1.67-MU-M GA0.47IN0.53AS-INP DH LASERS DOUBLE CLADDED WITH INP BY LPE TECHNIQUE
[J].
ARAI, S
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku
ARAI, S
;
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku
SUEMATSU, Y
;
ITAYA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku
ITAYA, Y
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1979,
18
(03)
:709
-710
[2]
THE TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT OF GAINASP-INP DH LASERS
[J].
ASADA, M
论文数:
0
引用数:
0
h-index:
0
ASADA, M
;
ADAMS, AR
论文数:
0
引用数:
0
h-index:
0
ADAMS, AR
;
STUBKJAER, KE
论文数:
0
引用数:
0
h-index:
0
STUBKJAER, KE
;
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
SUEMATSU, Y
;
ITAYA, Y
论文数:
0
引用数:
0
h-index:
0
ITAYA, Y
;
ARAI, S
论文数:
0
引用数:
0
h-index:
0
ARAI, S
.
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1981,
17
(05)
:611
-619
[3]
CYCLOTRON-RESONANCE IN N-TYPE IN1-XGAXASYP1-Y
[J].
BRENDECKE, H
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
BRENDECKE, H
;
STORMER, HL
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
STORMER, HL
;
NELSON, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
NELSON, RJ
.
APPLIED PHYSICS LETTERS,
1979,
35
(10)
:772
-774
[4]
CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS
[J].
CASEY, HC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
CASEY, HC
;
STERN, F
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
STERN, F
.
JOURNAL OF APPLIED PHYSICS,
1976,
47
(02)
:631
-643
[5]
Casey jr H. C., 1978, HETEROSTRUCTURE LA B, P9
[6]
CALCULATED ABSORPTION, EMISSION, AND GAIN IN IN0.72GA0.28AS0.6P0.4
[J].
DUTTA, NK
论文数:
0
引用数:
0
h-index:
0
DUTTA, NK
.
JOURNAL OF APPLIED PHYSICS,
1980,
51
(12)
:6095
-6100
[7]
GAIN SPECTRA IN GAAS DOUBLE-HETEROSTRUCTURE INJECTION LASERS
[J].
HAKKI, BW
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
HAKKI, BW
;
PAOLI, TL
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
PAOLI, TL
.
JOURNAL OF APPLIED PHYSICS,
1975,
46
(03)
:1299
-1306
[8]
1.6 MU-M WAVELENGTH BURIED HETEROSTRUCTURE GAINASP-INP LASERS
[J].
ITAYA, Y
论文数:
0
引用数:
0
h-index:
0
ITAYA, Y
;
TANBUNEK, T
论文数:
0
引用数:
0
h-index:
0
TANBUNEK, T
;
KISHINO, K
论文数:
0
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0
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0
KISHINO, K
;
ARAI, S
论文数:
0
引用数:
0
h-index:
0
ARAI, S
;
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
SUEMATSU, Y
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(03)
:L141
-L144
[9]
BAND STRUCTURE OF INDIUM ANTIMONIDE
[J].
KANE, EO
论文数:
0
引用数:
0
h-index:
0
KANE, EO
.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1957,
1
(04)
:249
-261
[10]
LONGITUDINAL MODE SELF-STABILIZATION IN SEMICONDUCTOR-LASERS
[J].
KAZARINOV, RF
论文数:
0
引用数:
0
h-index:
0
KAZARINOV, RF
;
HENRY, CH
论文数:
0
引用数:
0
h-index:
0
HENRY, CH
;
LOGAN, RA
论文数:
0
引用数:
0
h-index:
0
LOGAN, RA
.
JOURNAL OF APPLIED PHYSICS,
1982,
53
(07)
:4631
-4644
←
1
2
3
4
→
共 34 条
[1]
1.67-MU-M GA0.47IN0.53AS-INP DH LASERS DOUBLE CLADDED WITH INP BY LPE TECHNIQUE
[J].
ARAI, S
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku
ARAI, S
;
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku
SUEMATSU, Y
;
ITAYA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku
ITAYA, Y
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1979,
18
(03)
:709
-710
[2]
THE TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT OF GAINASP-INP DH LASERS
[J].
ASADA, M
论文数:
0
引用数:
0
h-index:
0
ASADA, M
;
ADAMS, AR
论文数:
0
引用数:
0
h-index:
0
ADAMS, AR
;
STUBKJAER, KE
论文数:
0
引用数:
0
h-index:
0
STUBKJAER, KE
;
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
SUEMATSU, Y
;
ITAYA, Y
论文数:
0
引用数:
0
h-index:
0
ITAYA, Y
;
ARAI, S
论文数:
0
引用数:
0
h-index:
0
ARAI, S
.
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1981,
17
(05)
:611
-619
[3]
CYCLOTRON-RESONANCE IN N-TYPE IN1-XGAXASYP1-Y
[J].
BRENDECKE, H
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
BRENDECKE, H
;
STORMER, HL
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
STORMER, HL
;
NELSON, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
NELSON, RJ
.
APPLIED PHYSICS LETTERS,
1979,
35
(10)
:772
-774
[4]
CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS
[J].
CASEY, HC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
CASEY, HC
;
STERN, F
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
STERN, F
.
JOURNAL OF APPLIED PHYSICS,
1976,
47
(02)
:631
-643
[5]
Casey jr H. C., 1978, HETEROSTRUCTURE LA B, P9
[6]
CALCULATED ABSORPTION, EMISSION, AND GAIN IN IN0.72GA0.28AS0.6P0.4
[J].
DUTTA, NK
论文数:
0
引用数:
0
h-index:
0
DUTTA, NK
.
JOURNAL OF APPLIED PHYSICS,
1980,
51
(12)
:6095
-6100
[7]
GAIN SPECTRA IN GAAS DOUBLE-HETEROSTRUCTURE INJECTION LASERS
[J].
HAKKI, BW
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
HAKKI, BW
;
PAOLI, TL
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
PAOLI, TL
.
JOURNAL OF APPLIED PHYSICS,
1975,
46
(03)
:1299
-1306
[8]
1.6 MU-M WAVELENGTH BURIED HETEROSTRUCTURE GAINASP-INP LASERS
[J].
ITAYA, Y
论文数:
0
引用数:
0
h-index:
0
ITAYA, Y
;
TANBUNEK, T
论文数:
0
引用数:
0
h-index:
0
TANBUNEK, T
;
KISHINO, K
论文数:
0
引用数:
0
h-index:
0
KISHINO, K
;
ARAI, S
论文数:
0
引用数:
0
h-index:
0
ARAI, S
;
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
SUEMATSU, Y
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(03)
:L141
-L144
[9]
BAND STRUCTURE OF INDIUM ANTIMONIDE
[J].
KANE, EO
论文数:
0
引用数:
0
h-index:
0
KANE, EO
.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1957,
1
(04)
:249
-261
[10]
LONGITUDINAL MODE SELF-STABILIZATION IN SEMICONDUCTOR-LASERS
[J].
KAZARINOV, RF
论文数:
0
引用数:
0
h-index:
0
KAZARINOV, RF
;
HENRY, CH
论文数:
0
引用数:
0
h-index:
0
HENRY, CH
;
LOGAN, RA
论文数:
0
引用数:
0
h-index:
0
LOGAN, RA
.
JOURNAL OF APPLIED PHYSICS,
1982,
53
(07)
:4631
-4644
←
1
2
3
4
→