ANGLE RESOLVED ULTRAVIOLET PHOTOEMISSION SPECTROSCOPY STUDY OF THE ELECTRONIC-STRUCTURE OF INSB(111) SURFACES ALONG THE [110] AZIMUTH

被引：7

作者：

HERNANDEZCALDERON, I

HOCHST, H

MAZUR, A

POLLMANN, J

机构：

[1] UNIV WISCONSIN,CTR SYNCHROTRON RADIAT,STOUGHTON,WI 53589

[2] UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.574915

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：2042 / 2045

页数：4

共 22 条

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[2] ATOMIC-STRUCTURE OF THE (2X2) RECONSTRUCTED GAAS (111) SURFACE - A MULTIVACANCY MODEL
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[3] PHOTOEMISSION SPECTROSCOPY USING SYNCHROTRON RADIATION .1. OVERVIEWS OF VALENCE-BAND STRUCTURE FOR GE, GAAS, GAP, INSB, ZNSE, CDTE, AND AGL
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[4] SURFACE STUDIES OF GAAS(111) AND GAAS(111) USING HIGH-RESOLUTION ELECTRON-ENERGY LOSS SPECTROSCOPY, X-RAY PHOTOELECTRON-SPECTROSCOPY, AND LOW-ENERGY ELECTRON-DIFFRACTION
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[5] CHARACTERISTICS OF THE (111) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS
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[6] SURFACE STRUCTURES AND PROPERTIES OF DIAMOND-STRUCTURE SEMICONDUCTORS
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[7] NEW METHOD FOR THE ANALYSIS OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION - A-SN(001) AND INSB(001) SURFACES
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[J]. PHYSICAL REVIEW B, 1983, 27 (08): : 4961 - 4965
[8] ANGLE-RESOLVED PHOTOEMISSION OF ALPHA-SN(111) AND THE POLAR (111) AND (111BAR) SURFACES OF INSB
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HOCHST, H
[J]. SURFACE SCIENCE, 1985, 152 (APR) : 1035 - 1041
[9] PHOTOEMISSION-STUDY OF THE SURFACE ELECTRONIC-STRUCTURE OF INSB(110)
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[J]. PHYSICAL REVIEW B, 1984, 30 (08): : 4528 - 4532
[10] HOCHST H, 1985, J VAC SCI TECHNOL A, V3, P911, DOI 10.1116/1.573347

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