FINITE BOXES - A GENERALIZATION OF THE FINITE-DIFFERENCE METHOD SUITABLE FOR SEMICONDUCTOR-DEVICE SIMULATION

被引：52

作者：

FRANZ, AF

FRANZ, GA

SELBERHERR, S

RINGHOFER, C

MARKOWICH, P

机构：

[1] VIENNA TECH UNIV,INST ANGEW MATH,A-1040 VIENNA,AUSTRIA

[2] UNIV WISCONSIN,MATH RES CTR,MADISON,WI 53706

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 09期

关键词：

D O I：

10.1109/T-ED.1983.21261

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1070 / 1082

页数：13

共 20 条

[1]

ADLER MS, 1979, 1 P NASECODE C, P3

[2] TIME-DEPENDENT CARRIER FLOW IN A TRANSISTOR STRUCTURE UNDER NONISOTHERMAL CONDITIONS [J].

ALWIN, VC ;

NAVON, DH ;

TURGEON, LJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (11) :1297-1304

[3] PARAMETER SELECTION FOR NEWTON-LIKE METHODS APPLICABLE TO NON-LINEAR PARTIAL-DIFFERENTIAL EQUATIONS [J].

BANK, RE ;

ROSE, DJ .

SIAM JOURNAL ON NUMERICAL ANALYSIS, 1980, 17 (06) :806-822

[4]

Curtis A. R., 1974, Journal of the Institute of Mathematics and Its Applications, V13, P121

[5] MODIFIED NEWTON METHOD FOR SOLUTION OF ILL-CONDITIONED SYSTEMS OF NONLINEAR EQUATIONS WITH APPLICATION TO MULTIPLE SHOOTING [J].

DEUFLHARD, P .

NUMERISCHE MATHEMATIK, 1974, 22 (04) :289-315

[6] CARRIER MOBILITIES IN SILICON SEMI-EMPIRICALLY RELATED TO TEMPERATURE, DOPING AND INJECTION LEVEL [J].

DORKEL, JM ;

LETURCQ, P .

SOLID-STATE ELECTRONICS, 1981, 24 (09) :821-825

[7] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J].

DZIEWIOR, J ;

SCHMID, W .

APPLIED PHYSICS LETTERS, 1977, 31 (05) :346-348

[8]

Forsythe G.E., 1960, FINITE DIFFERENCE ME

[9]

FRANZ AF, UNPUB ORDERING DIREC

[10] POWER-LIMITING BREAKDOWN EFFECTS IN GAAS-MESFET [J].

FRENSLEY, WR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) :962-970

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