GAP RED-LIGHT EMITTING DIODES BY ALLOYING TECHNIQUE

被引：0

作者：

PUROHIT, RK ^{[1
]}

MUKHERJI, SN ^{[1
]}

SINGH, R ^{[1
]}

DUBEY, GC ^{[1
]}

机构：

[1] SOLID STATE PHYS LAB,DELHI 110007,INDIA

来源：

INDIAN JOURNAL OF TECHNOLOGY | 1976年 / 14卷 / 02期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：80 / 82

页数：3

共 9 条

[1] ELECTROLUMINESCENT DEVICES USING CARRIER INJECTION IN GALLIUM PHOSPHIDE
ALLEN, JW
MONCASTER, ME
STARKIEWICZ, J
[J]. SOLID-STATE ELECTRONICS, 1963, 6 (02) : 95 - &
[2] LIGHT-EMITTING DIODES
BERGH, AA
DEAN, PJ
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (02): : 156 - +
[3] SINGLE CRYSTAL ELECTROLUMINESCENT MATERIALS
CASEY, HC
TRUMBORE, FA
[J]. MATERIALS SCIENCE AND ENGINEERING, 1970, 6 (02): : 69 - +
[4] CODERRE WM, 40013 MICR INT LTD T
[5] KALYUZHNAYA AG, 1964, USSR J INORG CHEM, V6, P1497
[6] OPTIMIZATION OF ELECTROLUMINESCENT EFFICIENCIES FOR VAPOR-GROWN GAAS 1-XPX DIODES
NUESE, CJ
TIETJEN, JJ
GANNON, JJ
GOSSENBERGER, HF
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (02) : 248 - +
[7] INJECTION ELECTROLUMINESCENCE AT P-N JUNCTIONS IN ZINC-DOPED GALLIUM PHOSPHIDE
STARKIEWICZ, J
ALLEN, JW
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (JUL) : 881 - &
[8] WAGNER PR, 1967, ELECTROCHEM TECHNOL, V5, P64
[9] 1965, FERRANTI LTD CATALOG, V1