STEPS ON (001) SILICON SURFACES

被引:19
作者
ASPNES, DE
IHM, J
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 04期
关键词
D O I
10.1116/1.583694
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:939 / 944
页数:6
相关论文
共 37 条
[1]   GROWTH AND PROPERTIES OF SINGLE DOMAIN GAAS, ALGAAS AND THEIR HETEROSTRUCTURES ON SI BY MOCVD AND MBE [J].
AKIYAMA, M ;
NISHI, S ;
KAMINISHI, K .
SURFACE SCIENCE, 1986, 174 (1-3) :19-30
[2]  
AKIYAMA M, 1984, J CRYST GROWTH, V68, P21, DOI 10.1016/0022-0248(84)90391-9
[3]  
AKIYAMA M, 1986, MATER RES SOC S P, V67, P53
[4]   PERFORMANCE OF QUARTER-MICRON GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS ON SI SUBSTRATES [J].
AKSUN, MI ;
MORKOC, H ;
LESTER, LF ;
DUH, KHG ;
SMITH, PM ;
CHAO, PC ;
LONGERBONE, M ;
ERICKSON, LP .
APPLIED PHYSICS LETTERS, 1986, 49 (24) :1654-1655
[5]   BIATOMIC STEPS ON (001) SILICON SURFACES [J].
ASPNES, DE ;
IHM, J .
PHYSICAL REVIEW LETTERS, 1986, 57 (24) :3054-3057
[6]  
Bringans R. D., 1987, 18th International Conference on the Physics of Semiconductors, P191
[7]   SURFACE BANDS FOR SINGLE-DOMAIN 2X1 RECONSTRUCTED SI(100) AND SI(100)-AS - PHOTOEMISSION RESULTS FOR OFF-AXIS CRYSTALS [J].
BRINGANS, RD ;
UHRBERG, RIG ;
OLMSTEAD, MA ;
BACHRACH, RZ .
PHYSICAL REVIEW B, 1986, 34 (10) :7447-7450
[8]   THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J].
BURTON, WK ;
CABRERA, N ;
FRANK, FC .
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) :299-358
[9]  
CASTELLAN GW, 1971, PHYSICAL CHEM