GROWTH PECULIARITIES OF GALLIUM ARSENIDE SINGLE CRYSTALS

被引：49
作者：
STEINEMANN, A
ZIMMERLI, U
机构：
来源：
SOLID-STATE ELECTRONICS | 1963年 / 6卷 / 06期
关键词：
D O I：
10.1016/0038-1101(63)90055-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：597 / &
相关论文
共 44 条
[1]  
ABRAHAMS MS, 1959, METALLURGICAL SOC C, V5, P225
[2]   ON THE MECHANICAL PROPERTIES OF INDIUM ANTIMONIDE [J].
ALLEN, JW .
PHILOSOPHICAL MAGAZINE, 1957, 2 (24) :1475-&
[3]  
ALLRED WP, 1961, J ELECTROCHEM SOC, V108, P257
[4]  
BARDSLEY W, 1957, J ELECTRON CONTR, V3, P103
[5]  
BROOKER GR, 1962, J APPL PHYS, V33, P750
[6]   THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J].
BURTON, WK ;
CABRERA, N ;
FRANK, FC .
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) :299-358
[7]   ASYMMETRIES IN SURFACE PROPERTIES OF (111) AND (111) FACES OF ZINC TELLURIDE [J].
DILLON, JA .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (02) :669-&
[8]   ETUDE THERMODYNAMIQUE DES COMPOSES-III-V ET COMPOSES-II-VI PAR SPECTROMETRIE DE MASSE [J].
DROWART, J ;
GOLDFINGER, P .
JOURNAL DE CHIMIE PHYSIQUE ET DE PHYSICO-CHIMIE BIOLOGIQUE, 1958, 55 (10) :721-732
[9]  
ELLIS SG, 1959, J APPL PHYS, V30, P1412
[10]  
FOLBERTH DG, 1955, Z NATURFORSCH A, V10, P615
12345