OPTOELECTRONIC CHARGE-COUPLED-DEVICE (OECCD) USING INP MIS CAPACITOR ARRAY

被引：4

作者：

PAL, BB

NELSON, SS

机构：

[1] Department of Electronics Engineering, Institute of Technology, Banaras Hindu University, Varanasi

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 10期

关键词：

D O I：

10.1109/16.277350

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InP MIS structures are of recent interest for high-speed application. We propose here an optoelectronic charge coupled device (OECCD) which is directly compatible with an incident optical signal. The nonlinear partial differential equation consisting of optical generation and recombination is solved in one dimension using the Crank-Nicolson finite difference scheme. The parameter estimated is the charge transfer inefficiency considering InP MIS capacitor arrays and compared to Si OECCD.

引用

页码：1878 / 1880

页数：3

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