A QUICK THERMOELECTRIC TECHNIQUE FOR TYPING HGCDTE AT LIQUID-NITROGEN TEMPERATURE

被引:19
作者
CHEN, MC
机构
[1] Texas Instruments Incorporated, Central Research Laboratories, Dallas
关键词
D O I
10.1063/1.350926
中图分类号
O59 [应用物理学];
学科分类号
摘要
A simple and quick technique based on thermoelectric effect of semiconductors has been developed for screening the conductivity type of narrow band-gap HgCdTe materials. This technique generates a temperature gradient across the sample by partly dipping it in liquid nitrogen. The induced Seebeck voltage is then measured by loading two spring contact probes to two separate points on the sample below and above the liquid nitrogen level. It was found, as expected by the theory, that the thermoelectric measurements on p-type HgCdTe are much less influenced by the inverted surface effects than Hall measurements.
引用
收藏
页码:3636 / 3638
页数:3
相关论文
共 12 条
[1]   DETERMINATION OF ACCEPTOR DENSITIES IN P-TYPE HG1-XCDXTE BY THERMOELECTRIC MEASUREMENTS [J].
BAARS, J ;
BRINK, D ;
ZIEGLER, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (03) :1709-1715
[2]   THE P-TO-N CONVERSION OF HGCDTE, HGZNTE AND HGMNTE BY ANODIC-OXIDATION AND SUBSEQUENT HEAT-TREATMENT [J].
BROGOWSKI, P ;
PIOTROWSKI, J .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (06) :530-532
[3]   THE TEMPERATURE-DEPENDENCE OF THE ANOMALOUS HALL-EFFECTS IN P-TYPE HGCDTE [J].
CHEN, MC .
JOURNAL OF APPLIED PHYSICS, 1989, 65 (04) :1571-1577
[4]   INVERTED SURFACE EFFECT OF P-TYPE HGCDTE [J].
CHEN, MC .
APPLIED PHYSICS LETTERS, 1987, 51 (22) :1836-1838
[5]  
EHRENREICH E, 1961, J APPL PHYS, V32, P2155
[6]   THERMOELECTRIC PROPERTIES OF P-HG1-XCDXTE [J].
HOSCHL, P ;
MORAVEC, P ;
BELAS, E ;
FRANC, J ;
GRILL, R .
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1988, 147 (02) :621-628
[7]   HG0.7CD0.3TE/SIO2-PHOTOX INTERFACE PROPERTIES STUDIED BY PHOTOINDUCED AND BIAS-INDUCED CHARGING [J].
KSENDZOV, A ;
POLLAK, FH ;
WILSON, JA ;
COTTON, VA .
JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :834-839
[8]  
Lovet D. R., 1977, SEMIMETALS NARROW BA, P72
[9]  
MANY A, 1971, SEMICONDUCTOR SURFAC, P148
[10]   THEORY OF AN EXPERIMENT FOR MEASURING THE MOBILITY AND DENSITY OF CARRIERS IN THE SPACE-CHARGE REGION OF A SEMICONDUCTOR SURFACE [J].
PETRITZ, RL .
PHYSICAL REVIEW, 1958, 110 (06) :1254-1262