CHEMICAL BEAM EPITAXY OF INGAAS

被引：34
作者：
TSANG, WT
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 03期
关键词：
D O I：
10.1063/1.336068
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1415 / 1418
页数：4
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