DEPTH PROFILES OF VACANCY-TYPE DEFECT IN SI+-IMPLANTED GAAS RESULTING FROM RAPID THERMAL ANNEALING

被引：4

作者：

LEE, JL ^{[1
]}

SHIM, KH ^{[1
]}

KIM, JS ^{[1
]}

PARK, HM ^{[1
]}

MA, DS ^{[1
]}

TANIGAWA, S ^{[1
]}

UEDONO, A ^{[1
]}

机构：

[1] UNIV TSUKUBA,INST MAT SCI,SAKURA,IBARAKI 305,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 01期

关键词：

D O I：

10.1063/1.342559

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：396 / 397

页数：2

共 10 条

[1] INVESTIGATION OF DEFECTS IN GALLIUM-ARSENIDE USING POSITRON-ANNIHILATION [J].

DANNEFAER, S ;

HOGG, B ;

KERR, D .

PHYSICAL REVIEW B, 1984, 30 (06) :3355-3366

[2] DEPENDENCE OF DEEP-LEVEL PARAMETERS IN ION-IMPLANTED GAAS-MESFETS ON MATERIAL PREPARATION [J].

DHAR, S ;

BHATTACHARYA, PK ;

JUANG, FY ;

HONG, WP ;

SADLER, RA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (01) :111-118

[3] A COMPARISON OF RAPID THERMAL ANNEALING AND CONTROLLED-ATMOSPHERE ANNEALING OF SI-IMPLANTED GAAS [J].

KANBER, H ;

CIPOLLI, RJ ;

HENDERSON, WB ;

WHELAN, JM .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (10) :4732-4737

[4] STAGES IN THE RECOVERY OF DEFORMED SINGLE-CRYSTALS OF IRON STUDIED BY POSITION ANNIHILATION TECHNIQUES [J].

LEE, JL ;

WABER, JT ;

PARK, YK ;

DEHOSSON, JTM .

MATERIALS SCIENCE AND ENGINEERING, 1986, 81 (1-2) :379-390

[5] DEPTH PROFILES ON ION-IMPLANTATION INDUCED VACANCY-TYPE DEFECTS IN GAAS AND SI OBSERVED BY SLOW POSITRON [J].

LEE, JL ;

KIM, JS ;

PARK, HM ;

MA, DS ;

TANIGAWA, S ;

UEDONO, A .

APPLIED PHYSICS LETTERS, 1988, 53 (14) :1302-1304

[6] TRANSMISSION OF 1-6-KEV POSITRONS THROUGH THIN METAL-FILMS [J].

MILLS, AP ;

WILSON, RJ .

PHYSICAL REVIEW A, 1982, 26 (01) :490-500

[7] DEFECT STRUCTURE AND INTERMIXING OF ION-IMPLANTED ALXGA1-XAS/GAAS SUPERLATTICES [J].

RALSTON, J ;

WICKS, GW ;

EASTMAN, LF ;

DECOOMAN, BC ;

CARTER, CB .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (01) :120-123

[8] HIGH-QUALITY SI-IMPLANTED GAAS ACTIVATED BY A 2-STEP RAPID THERMAL ANNEALING TECHNIQUE [J].

SEO, KS ;

DHAR, S ;

BHATTACHARYA, PK .

APPLIED PHYSICS LETTERS, 1985, 47 (05) :500-502

[9] EFFECT OF DOPING AND THERMAL VACANCIES ON POSITRON-ANNIHILATION IN SEMICONDUCTORS [J].

TANIGAWA, S ;

SHIOTANI, N ;

NAGAI, R ;

HINODE, K ;

DOYAMA, M .

APPLIED PHYSICS, 1979, 18 (01) :81-83

[10] A STUDY OF AGGLOMERATION AND RELEASE PROCESSES OF HELIUM IMPLANTED IN NICKEL BY A VARIABLE ENERGY POSITRON BEAM [J].

TANIGAWA, S ;

IWASE, Y ;

UEDONO, A ;

SAKAIRI, H .

JOURNAL OF NUCLEAR MATERIALS, 1985, 133 (AUG) :463-467

← 1 →