SUB-MICRON PATTERN REPLICATION USING A HIGH CONTRAST MASK AND 2-LAYER RESIST IN X-RAY-LITHOGRAPHY

被引：5

作者：

SAITOH, Y

YOSHIHARA, H

WATANABE, I

NAKAYAMA, S

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 01期

关键词：

D O I：

10.1116/1.582917

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

LITHOGRAPHY

引用

页码：63 / 67

页数：5

共 8 条

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TISCHER, P .

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[2] SPURIOUS EFFECTS CAUSED BY CONTINUOUS RADIATION AND EJECTED ELECTRONS IN X-RAY LITHOGRAPHY [J].

MALDONADO, JR ;

COQUIN, GA ;

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SOMEKH, S .

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[3]

MAYDAN D, 1975, IEEE T ELECTRON DEVI, V12, P426

[4] HIGH-RESOLUTION PATTERN REPLICATION USING SOFT X-RAYS [J].

SPEARS, DL ;

SMITH, HI .

ELECTRONICS LETTERS, 1972, 8 (04) :102-&

[5]

SUGAWARA S, 1980, SPR EL SOC M ST LOUI, P680

[6]

Sugiyama H., 1974, Bulletin of the Electrotechnical Laboratory, V38, P351

[7] VERY STEEP PROFILE RESIST PATTERN PREPARATION BY REACTIVE ION ETCHING WITH AR+CH4 GAS-MIXTURE [J].

WATANABE, I ;

YOSHIHARA, H ;

SAITOH, Y ;

MATSUO, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) :L804-L806

[8]

YOSHIHARA H, 1978, JPN J APPL PHYS, V18, P2021

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