UNPINNED SCHOTTKY-BARRIER FORMATION AT METAL GAAS INTERFACES

被引：50

作者：

BRILLSON, LJ

VITURRO, RE

MAILHIOT, C

SHAW, JL

TACHE, N

MCKINLEY, J

MARGARITONDO, G

WOODALL, JM

KIRCHNER, PD

PETTIT, GD

WRIGHT, SL

机构：

[1] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53706

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.584247

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1263 / 1269

页数：7

共 50 条

[21] AL-GAAS (001) SCHOTTKY-BARRIER FORMATION
SVENSSON, SP
LANDGREN, G
ANDERSSON, TG
JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) : 4474 - 4481
[22] METAL-GASE AND METAL-INP INTERFACES - SCHOTTKY-BARRIER FORMATION AND INTERFACIAL REACTIONS
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MCGOVERN, IT
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[23] INTERFACIAL CHEMISTRY AND SCHOTTKY-BARRIER FORMATION OF THE NI/INP(110) AND NI/GAAS(110) INTERFACES
KENDELEWICZ, T
WILLIAMS, MD
PETRO, WG
LINDAU, I
SPICER, WE
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[24] FORMATION OF METAL-SEMICONDUCTOR INTERFACES - FROM THE SUBMONOLAYER REGIME TO THE REAL SCHOTTKY-BARRIER
SCHAFFLER, F
ABSTREITER, G
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1184 - 1189
[25] ELECTRICAL MODELING OF ION-DAMAGED GAAS SCHOTTKY-BARRIER INTERFACES
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SEN, S
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[26] SCHOTTKY-BARRIER COUPLED SCHOTTKY-BARRIER GATE GAAS-FET LOGIC
HASHIZUME, N
YAMADA, H
TOMIZAWA, K
ELECTRONICS LETTERS, 1981, 17 (01) : 51 - 52
[27] SCHOTTKY-BARRIER COUPLED SCHOTTKY-BARRIER GATE GAAS-FET LOGIC
HASHIZUME, N
YAMADA, H
KOJIMA, T
MATSUMOTO, K
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1982, (63): : 557 - 562
[28] RARE-EARTH-METAL SCHOTTKY-BARRIER CONTACTS TO GAAS
WALDROP, JR
APPLIED PHYSICS LETTERS, 1985, 46 (09) : 864 - 866
[29] METAL CONTACTS TO GAAS WITH 1 EV SCHOTTKY-BARRIER HEIGHT
WALDROP, JR
GRANT, RW
APPLIED PHYSICS LETTERS, 1988, 52 (21) : 1794 - 1796
[30] INTERFACE CHEMISTRY OF METAL-GAAS SCHOTTKY-BARRIER CONTACTS
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GRANT, RW
APPLIED PHYSICS LETTERS, 1979, 34 (10) : 630 - 632

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