A 3-DIMENSIONAL TRANSIENT MODEL DEVELOPED TO SIMULATE BY COMPUTER THE SCANNED ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SILICON

被引：0
作者：
RAIS, A
GAY, HC
MORELIERE, R
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PHYSICOCHEMICAL HYDRODYNAMICS | 1987年 / 8卷 / 04期
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O3 [力学];
学科分类号：
08 ; 0801 ;
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页码：383 / 400
页数：18
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