GROWTH-KINETICS, STRUCTURE AND SURFACE-MORPHOLOGY OF ALN ALPHA-AL2O3 EPITAXIAL LAYERS

被引：12

作者：

BUGGE, F ^{[1
]}

EFIMOV, AN ^{[1
]}

PICHUGIN, IG ^{[1
]}

TSAREGORODTSEV, AM ^{[1
]}

CHERNOV, MA ^{[1
]}

机构：

[1] VI LENIN ELECT ENGN INST,LENINGRAD 197022,USSR

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1987年 / 22卷 / 01期

关键词：

D O I：

10.1002/crat.2170220117

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：65 / 73

页数：9

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[10] THE GROWTH-KINETICS AND SURFACE-MORPHOLOGY OF GAN EPITAXIAL LAYERS ON SAPPHIRE [J].

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