共 15 条
[1]
EXPLOITING ENERGY-DEPENDENT PHOTOEMISSION IN SI D-METAL INTERFACES - THE SI(111)-PD CASE
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1981, 19 (03)
:636-640
[2]
[Anonymous], 1978, HDB XRAY PHOTOELECTR
[3]
ATOMIC AND ELECTRONIC-STRUCTURE OF INP-METAL INTERFACES - A PROTOTYPICAL III-V COMPOUND SEMICONDUCTOR
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1981, 19 (03)
:661-666
[4]
FERMI-LEVEL PINNING AND CHEMICAL-STRUCTURE OF INP-METAL INTERFACES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1982, 21 (02)
:564-569
[5]
BRILLSON LJ, 1982, SURFACE SCI REPT, V2, P124
[6]
Cho Y. S., UNPUB
[7]
HIRAKI A, 1980, J ELECTROCHEM SOC, V127, P2267
[8]
HO P, 1980, PHYS REV B, V22, P4748
[10]
CHEMISORPTION AND OXIDATION STUDIES OF (110) SURFACES OF GAAS, GASB, AND INP
[J].
PHYSICAL REVIEW B,
1978, 18 (06)
:2792-2806