NATURE OF LOCALIZED STATES IN HYDROGENATED SI-BASED AMORPHOUS-SEMICONDUCTOR FILMS ELUCIDATED FROM LESR AND CPM

被引:92
作者
SHIMIZU, T
KIDOH, H
MORIMOTO, A
KUMEDA, M
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1989年 / 28卷 / 04期
关键词
D O I
10.1143/JJAP.28.586
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:586 / 592
页数:7
相关论文
共 20 条
[1]  
AMER NM, 1984, SEMICONDUCTORS SEM B, V21, P101
[2]   TRANSIENT PHOTOCURRENT STUDY OF THE DANGLING BOND CENTER IN UNDOPED AMORPHOUS-SILICON [J].
HATTORI, K ;
OKAMOTO, H ;
HAMAKAWA, Y .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1988, 57 (01) :13-29
[3]  
ISHII N, 1988, JPN J APPL PHYS, V26, pL1800
[5]  
KOCKA J, 1988, ADV AMORPHOUS SEMICO, V1
[6]   PHOTOINDUCED ELECTRON-SPIN-RESONANCE IN AMORPHOUS SI1-XNX-H FILMS [J].
KUMEDA, M ;
YOKOMICHI, H ;
SHIMIZU, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (07) :L502-L504
[8]   GAP STATES IN PHOSPHORUS-DOPED AMORPHOUS-SILICON STUDIED BY ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY [J].
OKUSHI, H .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 52 (01) :33-57
[9]   ENERGY-LEVEL AND PHOTOIONIZATION CROSS-SECTION OF GAP STATES IN A-SI-H [J].
OKUSHI, H ;
TANAKA, K .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 :75-78
[10]   DEFECTS IN AMORPHOUS-SILICON - A NEW PERSPECTIVE [J].
PANTELIDES, ST .
PHYSICAL REVIEW LETTERS, 1986, 57 (23) :2979-2982