POWER LAW REVERSE CURRENT-VOLTAGE CHARACTERISTIC IN SCHOTTKY BARRIERS

被引：21

作者：

LEVINE, JD ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

SOLID-STATE ELECTRONICS | 1974年 / 17卷 / 10期

关键词：

D O I：

10.1016/0038-1101(74)90148-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1083 / 1086

页数：4

共 10 条

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[7] EXPERIMENTAL STUDY OF GOLD-GALLIUM ARSENIDE SCHOTTKY BARRIERS [J].

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[8] FORWARD CURRENT-VOLTAGE CHARACTERISTICS OF SCHOTTKY BARRIERS ON N-TYPE SILICON [J].

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[9] ELECTRON MULTIPLICATION AND SURFACE CHARGE ON ZINC OXIDE SINGLE CRYSTALS [J].

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[10]

WRONSKI C, PRIVATE COMMUNICATIO

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