PHASE NOISE-ANALYSIS OF THE SAPPHIRE LOADED SUPERCONDUCTING NIOBIUM CAVITY OSCILLATOR

被引:29
作者
TOBAR, ME
BLAIR, DG
机构
[1] Department of Physics, University of Western Australia, Nedlands, WA
关键词
D O I
10.1109/22.275269
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Measured phase noise of two GaAs FET amplifiers and a varactor phase shifter at 9.7 GHz reveal that optimum bias conditions change when cooling from room to liquid helium temperatures. This understanding enables optimisation of the electronic noise in an all cryogenic tunable sapphire loaded superconducting cavity (SLOSC) X-Band loop oscillator. The measured phase noise was limited by vibrations of the tuning mechanism. In a fixed frequency SLOSC oscillator the phase noise was limited by the amplifier noise, and has been measured to be -140 dBc/Hz at 1 kHz from the unfiltered port of the loop oscillator. Comparison of component and oscillator phase noise allows us to calculate the phase noise at the filtered port to be -175 dBc/Hz at 1 kHz offset.
引用
收藏
页码:344 / 347
页数:4
相关论文
共 18 条
[1]   EXPERIMENTAL-OBSERVATION OF FUNDAMENTAL MICROWAVE-ABSORPTION IN HIGH-QUALITY DIELECTRIC CRYSTALS [J].
BRAGINSKY, VB ;
ILCHENKO, VS ;
BAGDASSAROV, KS .
PHYSICS LETTERS A, 1987, 120 (06) :300-305
[2]   ULTRA-STABLE PERFORMANCE OF THE SUPERCONDUCTING CAVITY MASER [J].
DICK, GJ ;
WANG, RT .
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1991, 40 (02) :174-177
[3]  
DRISCOLL MM, 1991, 45TH P ANN S FREQ CO, P700
[4]  
GILES AJ, 1989, 43RD P ANN S FREQ CO, P89
[5]   MEASUREMENT OF FLICKER PHASE NOISE OF 1.4 GHZ MESFET AMPLIFIER AT TEMPERATURES BETWEEN 300-K AND 1.26-K [J].
HURLIMANN, MD ;
HARDY, WN .
ELECTRONICS LETTERS, 1987, 23 (06) :283-284
[6]  
KHANNA APS, 1991, IEEE MTT S DIG, V3, P1239
[7]   A SIMPLE MODEL OF FEEDBACK OSCILLATOR NOISE SPECTRUM [J].
LEESON, DB .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (02) :329-&
[8]   EFFECTS OF GAIN COMPRESSION, BIAS CONDITIONS, AND TEMPERATURE ON THE FLICKER PHASE NOISE OF AN 8.5 GHZ GAAS-MESFET AMPLIFIER [J].
LUSHER, CP ;
HARDY, WN .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1989, 37 (03) :643-646
[9]   FLICKER NOISE IN GAAS-MESFET X-BAND AMPLIFIERS IN THE TEMPERATURE-RANGE 300-K TO 2-K [J].
MANN, LD ;
BLAIR, DG ;
WELLINGTON, KJ .
ELECTRONICS LETTERS, 1986, 22 (20) :1037-1038
[10]   SUPERCONDUCTING-CAVITY STABILIZED OSCILLATORS WITH IMPROVED FREQUENCY STABILITY [J].
STEIN, SR ;
TURNEAURE, JP .
PROCEEDINGS OF THE IEEE, 1975, 63 (08) :1249-1250