LIGHT-SCATTERING DETERMINATION OF BAND OFFSETS IN GAAS-ALXGA1-XAS QUANTUM-WELLS

被引:72
作者
MENENDEZ, J
PINCZUK, A
WERDER, DJ
GOSSARD, AC
ENGLISH, JH
机构
来源
PHYSICAL REVIEW B | 1986年 / 33卷 / 12期
关键词
D O I
10.1103/PhysRevB.33.8863
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:8863 / 8866
页数:4
相关论文
共 32 条
[1]  
Abstreiter G., 1984, LIGHT SCATTERING SOL
[2]  
[Anonymous], 1978, HETEROSTRUCTURE LASE
[3]   DETERMINATION OF THE VALENCE-BAND DISCONTINUITY BETWEEN GAAS AND (AL,GA)AS BY THE USE OF P+-GAAS-(AL,GA)AS-P--GAAS CAPACITORS [J].
ARNOLD, D ;
KETTERSON, A ;
HENDERSON, T ;
KLEM, J ;
MORKOC, H .
APPLIED PHYSICS LETTERS, 1984, 45 (11) :1237-1239
[4]   SCHOTTKY-BARRIER ELECTROREFLECTANCE-APPLICATION TO GAAS [J].
ASPNNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW B, 1973, 7 (10) :4605-4652
[5]   ENERGY-BAND ALIGNMENT IN GAAS - (AL,GA)AS HETEROSTRUCTURES - THE DEPENDENCE ON ALLOY COMPOSITION [J].
BATEY, J ;
WRIGHT, SL .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (01) :200-209
[6]   ENERGY BAND-GAP DISCONTINUITIES IN GAAS-(AL,GA)AS HETEROJUNCTIONS [J].
BATEY, J ;
WRIGHT, SL ;
DIMARIA, DJ .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) :484-487
[7]  
BRUM JA, 1985, J PHYS C, V18, P89
[8]   DIRECT OBSERVATION OF SUPERLATTICE FORMATION IN A SEMICONDUCTOR HETEROSTRUCTURE [J].
DINGLE, R ;
GOSSARD, AC ;
WIEGMANN, W .
PHYSICAL REVIEW LETTERS, 1975, 34 (21) :1327-1330
[9]   REAPPRAISAL OF THE BAND-EDGE DISCONTINUITIES AT THE ALXGA1-XAS-GAAS HETEROJUNCTION [J].
DUGGAN, G ;
RALPH, HI ;
MOORE, KJ .
PHYSICAL REVIEW B, 1985, 32 (12) :8395-8397
[10]   A CRITICAL-REVIEW OF HETEROJUNCTION BAND OFFSETS [J].
DUGGAN, G .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1224-1230