COLLECTOR EMITTER OFFSET VOLTAGE IN DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：23
作者：
HAYES, JR [1 ]
GOSSARD, AC [1 ]
WIEGMANN, W [1 ]
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
ELECTRONICS LETTERS | 1984年 / 20卷 / 19期
关键词：
D O I：
10.1049/el:19840521
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：766 / 767
页数：2
相关论文
共 7 条
[1]   DOUBLE HETEROJUNCTION NPN GAAIAS GAAS BIPOLAR-TRANSISTOR [J].
BENEKING, H ;
SU, LM .
ELECTRONICS LETTERS, 1982, 18 (01) :25-26
[2]  
DOUBON C, 1983, IEDM TECH DIG, P689
[3]   OPTIMUM EMITTER GRADING FOR HETEROJUNCTION BIPOLAR-TRANSISTORS [J].
HAYES, JR ;
CAPASSO, F ;
MALIK, RJ ;
GOSSARD, AC ;
WIEGMANN, W .
APPLIED PHYSICS LETTERS, 1983, 43 (10) :949-951
[4]  
KANBE H, 1984, IEEE ELECTR DEVICE L, V5, P172, DOI 10.1109/EDL.1984.25873
[5]   HIGH-GAIN AL0.48IN0.52AS/GA0.53AS VERTICAL N-P-N HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY MOLECULAR-BEAM EPITAXY [J].
MALIK, RJ ;
HAYES, JR ;
CAPASSO, F ;
ALAVI, K ;
CHO, AY .
IEEE ELECTRON DEVICE LETTERS, 1983, 4 (10) :383-385
[6]  
SU LM, 1983, IEEE ELECTRON DEVICE, V4, P130
[7]  
TABATABAIEALAVI K, 1982, ELECTRON DEVIC LETT, V3, P379
1