SMALL-SIGNAL ADMITTANCE OF CARBON IMPLANTED P-N DIODES

被引：6

作者：

HOWES, MJ ^{[1
]}

MORGAN, DV ^{[1
]}

ASHBURN, P ^{[1
]}

机构：

[1] UNIV LEEDS,DEPT ELECT & ELECTR ENGN,LEEDS LS2 9JT,YORKSHIRE,ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 06期

关键词：

D O I：

10.1016/0038-1101(75)90024-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：491 / 497

页数：7

共 20 条

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[2]

ASHBURN P, TO BE PUBLISHED

[3]

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SAH, CT .

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[5] RESIDUAL ELECTRICALLY ACTIVE DEFECTS AFTER LATTICE REORDERING IN ION-IMPLANTED SILICON [J].

DAVIES, DE ;

ROOSILD, S .

APPLIED PHYSICS LETTERS, 1971, 18 (12) :548-&

[6] ISOLATION OF JUNCTION DEVICES IN GAAS USING PROTON BOMBARDMENT [J].

FOYT, AG ;

LINDLEY, WT ;

WOLFE, CM ;

DONNELLY, JP .

SOLID-STATE ELECTRONICS, 1969, 12 (04) :209-&

[7] DETERMINATION OF DEEP-LEVEL ENERGY AND DENSITY PROFILES IN INHOMOGENEOUS SEMICONDUCTORS [J].

GOTO, G ;

YANAGISAWA, S ;

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TAKANASHI, H .

APPLIED PHYSICS LETTERS, 1973, 23 (03) :150-151

[8]

GROVE AS, 1967, PHYS TECHNOL S, P104

[9]

HILIBRAND J, 1960, RCA REV, V21, P245

[10]

LADANY I, 1960, IREE T ELECTRON DEVI, P303

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