XRD AND SEM STUDIES OF REACTIVELY DEPOSITED TIN OXIDE THIN-FILMS

被引:5
作者
ABRAHAM, JT
KOSHY, P
VAIDYAN, VK
MUKHERJEE, PS
GURUSWAMY, P
KUMARI, LP
机构
[1] CSIR, REG RES LAB, TRIVANDRUM 695019, KERALA, INDIA
[2] UNIV KERALA, DEPT PHYS, TRIVANDRUM 695581, KERALA, INDIA
关键词
TIN OXIDE; REACTIVE EVAPORATION; TETRAGONAL; DISLOCATION DEFECTS; RECRYSTALLIZATION;
D O I
10.1007/BF02744841
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Stoichiometric polycrystalline tin oxide thin films were deposited by the reactive evaporation of tin-and the SnO2 formation was found to be strongly dependent on the deposition parameters. The preferred orientation of the SnO2 films deposited on different substrates was varying due to the dislocation defects arising during the thin film formation. The X-ray diffraction (XRD) studies identified a tetragonal structure while the scanning electron microscopic (SEM) studies revealed a polycrystalline surface for the SnO2 films reactively deposited.
引用
收藏
页码:557 / 562
页数:6
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