DETECTION OF DEFECT STRUCTURES IN ARSENIC ION-IMPLANTED SILICON BY FLUORINE DECORATION

被引：11

作者：

PRUSSIN, S ^{[1
]}

MARGOLESE, DI ^{[1
]}

TAUBER, RN ^{[1
]}

HEWITT, WB ^{[1
]}

机构：

[1] TRW ENERGY DEV GRP,REDONDO BEACH,CA 90278

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 04期

关键词：

D O I：

10.1063/1.334067

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：915 / 923

页数：9

共 23 条

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[12]

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[13]

MASTERS BJ, 1971, ION IMPLANTATION, P81

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[15]

MAYER JW, 1970, ION IMPLANTATION SEM, P40

[16] ROLE OF SEQUENTIAL ANNEALING, OXIDATION, AND DIFFUSION UPON DEFECT GENERATION IN ION-IMPLANTED SILICON SURFACES [J].

PRUSSIN, S .

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[17] THE NATURE OF DEFECT LAYER FORMATION FOR ARSENIC ION-IMPLANTATION [J].

PRUSSIN, S ;

MARGOLESE, DI ;

TAUBER, RN .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2316-2326

[18]

PRUSSIN S, UNPUB

[19] RECRYSTALLIZATION OF BURIED AMORPHOUS LAYERS AND ASSOCIATED ELECTRICAL EFFECTS IN P+-IMPLANTED SI [J].

SADANA, DK ;

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BOOKER, GR .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 46 (06) :611-633

[20] EFFECT ON ELECTRICAL-PROPERTIES OF SEGREGATION OF IMPLANTED P+ AT DEFECT SITES IN SI [J].

SADANA, DK ;

STRATHMAN, M ;

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BOOKER, GR .

APPLIED PHYSICS LETTERS, 1980, 37 (07) :615-618

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