DETECTION OF DEFECT STRUCTURES IN ARSENIC ION-IMPLANTED SILICON BY FLUORINE DECORATION

被引：11

作者：

PRUSSIN, S ^{[1
]}

MARGOLESE, DI ^{[1
]}

TAUBER, RN ^{[1
]}

HEWITT, WB ^{[1
]}

机构：

[1] TRW ENERGY DEV GRP,REDONDO BEACH,CA 90278

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 04期

关键词：

D O I：

10.1063/1.334067

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：915 / 923

页数：9

共 23 条

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[5]

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[7]

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[8] REDISTRIBUTION OF IMPLANTED OXYGEN AND CARBON IN SILICON [J].

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[9]

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[10] THERMAL REDISTRIBUTION OF OXYGEN DURING SOLID-PHASE REGROWTH OF ARSENIC-IMPLANTED AMORPHIZED SI [J].

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ORMOND, R ;

FURMAN, BK ;

EVANS, CA ;

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