PROPRIETES OPTIQUES DES SEMICONDUCTEURS DEGENERES

被引：2
作者：
SEBENNE, C
机构：
来源：
JOURNAL DE PHYSIQUE | 1963年 / 24卷 / 03期
关键词：
D O I：
10.1051/jphys:01963002403021600
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：216 / 220
页数：5
相关论文
共 43 条
[1]   THEORY OF IMPURITY BANDS WITH RANDOMLY DISTRIBUTED CENTERS [J].
AIGRAIN, P .
PHYSICA, 1954, 20 (11) :978-982
[2]  
AIGRAIN P, 1955, C R ACAD SC, V241, P849
[3]  
BALTENSPERGER W, 1953, PHILOS MAG, V44, P1355
[4]   DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS [J].
BARDEEN, J ;
SHOCKLEY, W .
PHYSICAL REVIEW, 1950, 80 (01) :72-80
[5]   MAGNETIC SUSCEPTIBILITY OF GERMANIUM [J].
BOWERS, R .
PHYSICAL REVIEW, 1957, 108 (03) :683-689
[6]  
BRECKENRIDGE, 1954, PHYSIC REV, V96, P571
[7]   ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB [J].
BURSTEIN, E .
PHYSICAL REVIEW, 1954, 93 (03) :632-633
[8]   EFFECT OF TEMPERATURE AND DOPING ON REFLECTIVITY OF GERMANIUM IN FUNDAMENTAL ABSORPTION REGION [J].
CARDONA, M ;
SOMMERS, HS .
PHYSICAL REVIEW, 1961, 122 (05) :1382-&
[9]   INTERNAL FIELD EMISSION AT NARROW SILICON AND GERMANIUM P-N JUNCTIONS [J].
CHYNOWETH, AG ;
FELDMANN, WL ;
LEE, CA ;
LOGAN, RA ;
PEARSON, GL ;
AIGRAIN, P .
PHYSICAL REVIEW, 1960, 118 (02) :425-434
[10]   IMPURITY BAND CONDUCTION IN GERMANIUM AND SILICON [J].
CONWELL, EM .
PHYSICAL REVIEW, 1956, 103 (01) :51-60
12345