Well structure by high-energy boron implantation for soft-error reduction in dynamic random access memories (DRAMs)

被引：1

作者：

Kishimoto, T

Park, YK

Takai, M

Ohno, Y

Sonoda, K

Sayama, H

Nishimura, T

Kinomura, A

Horino, Y

Fujii, K

机构：

[1] OSAKA UNIV,EXTREME MAT RES CTR,TOYONAKA,OSAKA 560,JAPAN

[2] MITSUBISHI ELECTR CORP,ULSI LAB,ITAMI,HYOGO 664,JAPAN

[3] OSAKA NATL RES INST,AIST,IKEDA,OSAKA 563,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 12B期

关键词：

soft error; dynamic random-access memory; nuclear microprobe; soft-error mapping; high-energy ion-implantation; ion-beam-induced current; charge collection;

D O I：

10.1143/JJAP.34.6899

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The susceptibiIity against soft-errors in dynamic random access memories (DRAMs) has been evaluated using nuclear microprobes by monitoring various addresses of a memory cell array to determine tile influence of upper wiring layers such as word lines, bit lines and other patterns. The correlations between irradiated positions of microprobes and monitored cell positions were discussed. The effect of buried implanted layers against carrier collection has also been investigated using ion-beam-induced-current (IBIC) measurement. IBIC measurement revealed that the retrograde well structure was more effective in suppressing soft errors than conventional well structures in bulk or epitaxial substrates.

引用

页码：6899 / 6902

页数：4