DEPENDENCE OF CHANNEL ELECTRIC-FIELD ON DEVICE SCALING

被引：102
作者：
CHAN, TY
KO, PK
HU, C
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 10期
关键词：
D O I：
10.1109/EDL.1985.26226
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：551 / 553
页数：3
相关论文
共 5 条
[1]   A SIMPLE METHOD TO CHARACTERIZE SUBSTRATE CURRENT IN MOSFETS [J].
CHAN, TY ;
KO, PK ;
HU, C .
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (12) :505-507
[2]   SIMPLE 2-DIMENSIONAL MODEL FOR IGFET OPERATION IN SATURATION REGION [J].
ELMANSY, YA ;
BOOTHROYD, AR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) :254-262
[3]   HOT-ELECTRON-INDUCED MOSFET DEGRADATION - MODEL, MONITOR, AND IMPROVEMENT [J].
HU, CM ;
TAM, SC ;
HSU, FC ;
KO, PK ;
CHAN, TY ;
TERRILL, KW .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :375-385
[4]  
Nguyen T. N., 1981, International Electron Devices Meeting, P596
[5]   MINIMOS - A TWO-DIMENSIONAL MOS-TRANSISTOR ANALYZER [J].
SELBERHERR, S ;
SCHUTZ, A ;
POTZL, HW .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1540-1550
1