PHOTOIONIZATION CROSS-SECTION IN POLAR SEMICONDUCTORS

被引：0
|
作者：
ZORKANI, I
ELHASNAOUI, Y
LEPINE, Y
KARTHEUSER, E
机构：
[1] UNIV MONTREAL,QUEBEC CITY,PQ H3C 3J7,CANADA
[2] UNIV LIEGE,INST PHYS,B-4000 SART,BELGIUM
来源：
JOURNAL DE PHYSIQUE I | 1995年 / 5卷 / 10期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Theoretical expression for the photoionization cross section of semi-deep level impurity is developed as a function of photon energy. In this model we take account to the interaction between the charge carriers and the longitudinal optical phonons of polar semiconductors and the influence of central-cell correction by means of a semi-empirical short range potential. The results obtained are compared with reported experimental and theoretical results.
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页码：1311 / 1316
页数：6
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