DISORDER DEPENDENCE OF ION-IMPLANTED GAAS ON THE TYPE OF ION

被引：3

作者：

TASHLYKOV, IS

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1982年 / 203卷 / 1-3期

关键词：

D O I：

10.1016/0167-5087(82)90668-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：523 / 526

页数：4

共 14 条

[1]

ABROJAN IA, 1979, FISIKA TEKHNIKA POLU, V13, P227

[2]

BURENKOV AF, 1980, TABLES ION IMPLANTED

[3]

Carter G., 1970, Radiation Effects, V6, P277, DOI 10.1080/00337577008236307

[4]

GOTZ G, 1978, FSU42 FORSCH ERG, P1

[5]

KUZNETSOV ON, 1977, FIZ TEKH POLUPROV, V11, P1449

[6]

MAYER JW, 1977, ION BEAM HDB MATERIA

[7]

NOVAK II, 1978, FIZ TVERD TELA+, V20, P2134

[8] DECHANNELING BY DISLOCATIONS IN ION-IMPLANTED AL [J].

PICRAUX, ST ;

RIMINI, E ;

FOTI, G ;

CAMPISANO, SU .

PHYSICAL REVIEW B, 1978, 18 (05) :2078-2096

[9]

ROMANOV SI, 1972, FIZ TEKH POLUPROV, V6, P1631

[10] TEM STRUCTURAL STUDIES ON SE+ IMPLANTED GAAS [J].

SADANA, DK ;

BOOKER, GR .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1979, 42 (1-2) :35-43