ELLIPSOMETRIC STUDIES OF ADSORPTION REACTIONS ON CLEAN SURFACES

被引:40
作者
MEYER, F [1 ]
机构
[1] PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
关键词
D O I
10.1016/0039-6028(76)90432-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:37 / 48
页数:12
相关论文
共 33 条
[1]   HIGH-RESOLUTION ELECTROREFLECTANCE MEASUREMENTS OF GAAS [J].
ASPNES, DE ;
STUDNA, AA .
SURFACE SCIENCE, 1973, 37 (01) :631-638
[2]   ELLIPSOMETRY IN SUB-MONOLAYER REGION [J].
BOOTSMA, GA ;
MEYER, F .
SURFACE SCIENCE, 1969, 14 (01) :52-&
[3]   ELLIPSOMETRY-LEED STUDY OF ADSORPTION OF OXYGEN ON (011) TUNGSTEN [J].
CARROLL, JJ ;
MELMED, AJ .
SURFACE SCIENCE, 1969, 16 :251-&
[4]   OPTICAL ABSORPTION OF SURFACE STATES IN ULTRAHIGH VACUUM CLEAVED (111) SURFACES OF GE AND SI [J].
CHIAROTTI, G ;
NANNARONE, S ;
PASTORE, R ;
CHIARADIA, P .
PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (10) :3398-+
[5]   OPTICAL-ABSORPTION OF SURFACE STATES AT SI(111)7X7 [J].
CHIAROTTI, G ;
CHIARADIA, P ;
NANNARONE, S .
SURFACE SCIENCE, 1975, 49 (01) :315-317
[6]   OXYGEN-INDUCED FRANZ-KELDYSH EFFECT AND SURFACE STATES ON GAAS(110) SURFACES IN ELLIPSOMETRY [J].
DORN, R ;
LUTH, H .
PHYSICAL REVIEW LETTERS, 1974, 33 (17) :1024-1027
[7]   PHOTOEMISSION PARTIAL YIELD MEASUREMENTS OF UNOCCUPIED INTRINSIC SURFACE STATES FOR GE(111) AND GAAS(110) [J].
EASTMAN, DE ;
FREEOUF, JL .
PHYSICAL REVIEW LETTERS, 1974, 33 (27) :1601-1605
[8]   PHOTOEMISSION DENSITIES OF INTRINSIC SURFACE STATES FOR SI, GE, AND GAAS [J].
EASTMAN, DE ;
GROBMAN, WD .
PHYSICAL REVIEW LETTERS, 1972, 28 (21) :1378-&
[9]   ADSORPTION STUDIES BY ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY [J].
FEUERBACHER, B .
SURFACE SCIENCE, 1975, 47 (01) :115-123
[10]   SURFACE OPTICAL-CONSTANTS OF SILICON AND GERMANIUM DERIVED FROM ELECTRON-ENERGY-LOSS SPECTROSCOPY [J].
FROITZHEIM, H ;
IBACH, H ;
MILLS, DL .
PHYSICAL REVIEW B, 1975, 11 (12) :4980-4988