NONLINEAR ABSORPTION IN DIRECT-GAP SEMICONDUCTORS

被引：33

作者：

MITRA, SS

NARDUCCI, LM

SHATAS, RA

TSAY, YF

VAIDYANATHAN, A

机构：

[1] USA,MISSILE COMMAND,REDSTONE ARSENAL,AL 35809

[2] UNIV RHODE ISLAND,PHYS DEPT,KINGSTON,RI 02881

[3] UNIV RHODE ISLAND,ELECT ENGN DEPT,KINGSTON,RI 02881

来源：

APPLIED OPTICS | 1975年 / 14卷 / 12期

关键词：

D O I：

10.1364/AO.14.003038

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：3038 / 3042

页数：5

共 30 条

[1]

ARSENEV VV, 1969, SOV PHYS JETP-USSR, V29, P413

[2]

BAKOS S, 1974, ADV ELECTRONICS ELEC, V36

[3] ENERGY LEVELS OF DIRECT EXCITONS IN SEMICONDUCTORS WITH DEGENERATE BANDS [J].

BALDERESCHI, A ;

LIPARI, NO .

PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (02) :439-+

[4]

BASOV NG, 1966, J PHYS SOC JPN, VS 21, P277

[5]

BASOV NG, 1966, SOV PHYS JETP-USSR, V23, P366

[6]

BESPALOV MS, 1969, SOV PHYS JETP-USSR, V28, P77

[7]

BRAUNSTEIN R, 1964, PHYS REV A, V134, P3313

[8]

Bredikhin V. I., 1973, Soviet Physics - Uspekhi, V16, P299, DOI 10.1070/PU1973v016n03ABEH005183

[9]

CALLAWAY J, 1974, QUANTUM THEORY SOL A, P248

[10] TRANSMITTANCE, LUMINESCENCE, AND PHOTOCURRENT IN CDS UNDER 2-PHOTON EXCITATION [J].

CATALANO, IM ;

CINGOLAN.A ;

MINAFRA, A .

PHYSICAL REVIEW B, 1974, 9 (02) :707-710

← 1 2 3 →