WET OXIDATION OF AMORPHOUS SI-GE LAYER DEPOSITED ON SI(001) AT 800-DEGREES-C AND 900-DEGREES-C

Amorphous Si0.56G0.44 films were deposited on (001)Si by electron beam evaporation in a vacuum having a base pressure of 10(-7) Torr. They were then wet oxidized at 800 and 900-degrees-C in an open tube furnace for various times. Cross (x)-sectional and plan view transmission electron microscope techniques were employed to characterize the samples. At 800-degrees-C, 30 min of wet oxidation produced a continuous polycrystalline Si-Ge layer, whereas 60 min of wet oxidation produced a discontinuous polycrystalline layer. After 100 min of wet oxidation at 800-degrees-C, the Si-Ge layer was almost completely oxidized and no observable evidence of the epitaxial Si-Ge layer was found. Wet oxidation at 900-degrees-C for 10 min produced a bilayer structure; one epitaxial and one polycrystalline layer separated by a contamination layer initially present on the substrate prior to deposition. A mostly epitaxial Si-Ge layer was obtained after 30 min of wet oxidation at 900-degrees-C. These results will be discussed in terms of a previously suggested epitaxial growth model. The failure to obtain an observable epitaxial Si-Ge layer by wet oxidation at 800-degrees-C will be discussed by consideration of changes in the kinetics and the stability of both SiO2 and GeO2 at this temperature.