MOS CAPACITANCE VOLTAGE CHARACTERISTICS AND DIELECTRIC-PROPERTIES OF ION-IMPLANTED THERMAL OXIDES ON SILICON

被引：1

作者：

CHANDORKAR, A ^{[1
]}

KARULKAR, VT ^{[1
]}

VENGURLEKAR, AS ^{[1
]}

RAMANATHAN, KV ^{[1
]}

机构：

[1] TATA INST FUNDAMENTAL RES,BOMBAY 400005,INDIA

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1984年 / 81卷 / 01期

关键词：

D O I：

10.1002/pssa.2210810146

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：407 / 414

页数：8

共 11 条

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GOETZBER.A
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1055 - +
[5] NICOLLIAN EH, 1982, MOS METAL OXIDE SEMI, pCH5
[6] NISSE EPE, 1974, J APPL PHYS, V45, P5196
[7] ORMAND DW, 1976, ION IMPLANTATION SEM, P305
[8] SURFACE-STATES AT THE NORMAL-GAAS-SIO2 INTERFACE FROM CONDUCTANCE AND CAPACITANCE MEASUREMENTS
STREEVER, RL
BRESLIN, JT
AHLSTROM, EH
[J]. SOLID-STATE ELECTRONICS, 1980, 23 (08) : 863 - 868
[9] SZE SM, 1969, PHYSICS SEMICONDUCTO, pCH9
[10] Wilson R.G., 1973, ION BEAMS