DIRECT GIGABIT MODULATION OF INJECTION-LASERS - STRUCTURE-DEPENDENT SPEED LIMITATIONS

被引：28

作者：

LINKE, RA ^{[1
]}

机构：

[1] BELL TEL LABS INC,CRAWFORD HILL LAB,LIGHTWAVE SYST RES DEPT,HOLMDEL,NJ 07733

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1984年 / 2卷 / 01期

关键词：

D O I：

10.1109/JLT.1984.1073565

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：40 / 43

页数：4

共 18 条

[1] 4 GBIT/S DIRECT MODULATION OF 1.3 MU-M INGAASP/INP SEMICONDUCTOR-LASERS [J].

HAGIMOTO, K ;

OHTA, N ;

NAKAGAWA, K .

ELECTRONICS LETTERS, 1982, 18 (18) :796-798

[2] HIGH-SPEED 1.55 MU-M SINGLE-LONGITUDINAL-MODE RIDGE WAVEGUIDE C-3 LASER [J].

KAMINOW, IP ;

KO, JS ;

LINKE, RA ;

STULZ, LW .

ELECTRONICS LETTERS, 1983, 19 (19) :784-785

[3]

KAMINOW IP, 1983, IEEE J QUANTUM ELECT, V20

[4]

KAMINOW IP, 1983, IEEE J QUANTUM ELECT, V19

[5]

KAMINOW IP, 1983, ELECTRON LETT, V19, P785

[6]

KRESSEL H, 1977, SEMICONDUCTOR LASERS, P578

[7]

KRESSEL H, 1977, SEMICONDUCTOR LASERS, P559

[8] VERY-HIGH-SPEED BACK-ILLUMINATED INGAAS-INP PIN PUNCH-THROUGH PHOTO-DIODES [J].

LEE, TP ;

BURRUS, CA ;

OGAWA, K ;

DENTAI, AG .

ELECTRONICS LETTERS, 1981, 17 (12) :431-432

[9]

LINKE RA, 1983, 27TH P SPIE ANN TECH

[10] INGAASP/INP (1.3-MU-M) BURIED-CRESCENT LASERS WITH SEPARATE OPTICAL CONFINEMENT [J].

LOGAN, RA ;

VANDERZIEL, JP ;

TEMKIN, H ;

HENRY, CH .

ELECTRONICS LETTERS, 1982, 18 (20) :895-896

← 1 2 →