OPTICAL STUDY OF II-VI SEMICONDUCTOR NANOSTRUCTURES

被引：17
作者：
DANG, LS
GOURGON, C
MAGNEA, N
MARIETTE, H
VIEU, C
机构：
[1] CEA,DEPT RECH FONDAMENTALE MAT CONDENSEE,PSC,SP2M,F-38041 GRENOBLE,FRANCE
[2] LAB MICROSTRUCT & MICROELECTR,CNRS,F-92225 BAGNEUX,FRANCE
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 11期
关键词：
D O I：
10.1088/0268-1242/9/11S/016
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we review some recent optical studies on CdTe-based nanostructures fabricated either by etching two-dimensional structures or by direct growth by molecular beam epitaxy. Photoluminescence can be observed on as-etched wires for sizes as small as 40 nm, due to the combined effect of exciton trapping on radiative centers and low surface damage. It is found that electrodynamic effects are very strong in gratings of wires for grating periods of about the photoluminescence wavelength.
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页码：1953 / 1958
页数：6
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