CALCULATION OF THE 1ST IONIZATION ENERGIES OF HYDROGENIC ACCEPTOR PAIRS IN SILICON

被引:1
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SZMULOWICZ, F
WENDELN, JK
SLATON, SC
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D O I
10.1063/1.333337
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O59 [应用物理学];
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页码:2945 / 2950
页数:6
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共 15 条
[1]   NATURE OF THE 0.111-EV ACCEPTOR LEVEL IN INDIUM-DOPED SILICON [J].
BARON, R ;
BAUKUS, JP ;
ALLEN, SD ;
MCGILL, TC ;
YOUNG, MH ;
KIMURA, H ;
WINSTON, HV ;
MARSH, OJ .
APPLIED PHYSICS LETTERS, 1979, 34 (04) :257-259
[2]   OPTICAL AND ELECTRICAL CHARACTERIZATION OF MULTIPLY DOPED SILICON - A STUDY OF THE SI-(IN,AL) SYSTEM [J].
BROWN, DH ;
OHMER, MC ;
BEASLEY, KD ;
ROME, JJ ;
BROWN, GJ ;
FISCHER, DW .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :8793-8797
[3]  
FISCHER DW, 1983, PHYS REV B, V27, P4826, DOI 10.1103/PhysRevB.27.4826
[4]   CARBON-ACCEPTOR PAIR CENTERS (X-CENTERS) IN SILICON [J].
JONES, CE ;
SCHAFER, D ;
SCOTT, W ;
HAGER, RJ .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :5148-5158
[5]   CENTRAL CELL EFFECTS ON ACCEPTOR SPECTRA IN SI AND GE [J].
LIPARI, NO ;
BALDERESCHI, A ;
THEWALT, MLW .
SOLID STATE COMMUNICATIONS, 1980, 33 (03) :277-279
[6]   MOTION OF ELECTRONS AND HOLES IN PERTURBED PERIODIC FIELDS [J].
LUTTINGER, JM ;
KOHN, W .
PHYSICAL REVIEW, 1955, 97 (04) :869-883
[7]   DETERMINATION OF RELATIVE IMPURITY CONCENTRATIONS USING PHOTO-LUMINESCENCE - A CASE-STUDY OF THE SI-(B, IN) SYSTEM [J].
MITCHARD, GS ;
MCGILL, TC .
APPLIED PHYSICS LETTERS, 1980, 37 (10) :959-961
[8]   EFFECT OF IMPURITY INTERACTION UPON IONIZATION ENERGY OF DONOR ELECTRONS IN GERMANIUM [J].
NAGASAKA, K ;
NARITA, S .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1973, 35 (03) :797-805
[9]  
NARITA K, 1979, SOLID STATE COMMUN, V29, P299, DOI 10.1016/0038-1098(79)91061-5
[10]   UNIDENTIFIED ACCEPTORS IN SILICON AND GERMANIUM [J].
OHMER, MC ;
LANG, JE .
APPLIED PHYSICS LETTERS, 1979, 34 (11) :750-752