SURFACTANT-MEDIATED CRYSTAL-GROWTH OF SEMICONDUCTORS

被引：150

作者：

KANDEL, D ^{[1
]}

KAXIRAS, E ^{[1
]}

机构：

[1] HARVARD UNIV,DIV APPL SCI,CAMBRIDGE,MA 02138

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 75卷 / 14期

关键词：

D O I：

10.1103/PhysRevLett.75.2742

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The influence of surfactants on semiconductor thin film growth is studied by means of a mesoscopic model combined with first principles calculations. We introduce a new kinetic mechanism that explains how surfactants induce layer-by-layer growth. The experimentally observed high density of 2D islands is a natural consequence of the chemical passivation of step edges, as well as flat surfaces, by the surfactant. In heteroepitaxial growth, we take strain effects into account, which leads to layer-by-layer growth at low temperatures and three-dimensional growth at high temperatures, in agreement with experiments.

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页码：2742 / 2745

页数：4

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